STW9NA60 sth9na60fi n - channel enhancement mode fast power mos transistor n typical r ds(on) = 0.69 w n 30v gate to source voltage rating n 100% avalanche tested n repetitive avalanche data at 100 o c n low intrinsic capacitances n gate charge minimized n reduced threshold voltage spread applications n high current, high speed switching n switch mode power supplies (smps) n dc-ac converters for welding equipment and uninterruptible power supplies and motor drive ? internal schematic diagram absolute maximum ratings symbol parameter value un it STW9NA60 sth9na60fi v ds drain-source voltage (v gs = 0) 600 v v dgr drain- gate voltage (r gs =20k w ) 600 v v gs gate-source voltage 30 v i d drain current (continuous) at t c =25 o c6.49.5a i d drain current (continuous) at t c =100 o c46a i dm ( ? ) drain current (pulsed) 38 38 a p tot total dissipation at t c =25 o c70160w derating factor 0.56 1.28 w/ o c v iso insulation withstand voltage (dc) ? 4000 v t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ( ? ) pulse width limited by safe operating area type v dss r ds(on) i d STW9NA60 sth9na60fi 600 v 600 v <0.8 w <0.8 w 9.5 a 6.4 a october 1998 1 2 3 to-247 isowatt218 1 2 3 1/10 .com .com .com 4 .com u datasheet
thermal data to-247 isowatt218 r thj-case thermal resistance junction-case max 0.78 1.78 o c/w r thj-amb r thc-sink t l thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 30 0.1 300 o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max, d <1%) 9.5 a e as single pulse avalanche energy (starting t j =25 o c, i d =i ar ,v dd =50v) 450 mj electrical characteristics (t case =25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d =250 m av gs = 0 600 v i dss zero gate voltage drain current (v gs =0) v ds =maxrating v ds =maxrating t c = 100 o c 25 250 m a m a i gss gate-body leakage current (v ds =0) v gs = 30 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs i d = 250 m a2.2533.75v r ds(on) static drain-source on resistance v gs =10v i d = 4.5 a 0.69 0.8 w i d(o n) on state drain current v ds >i d(o n) xr ds(on )ma x v gs =10v 9a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d(o n) xr ds(on )ma x i d =4.5a 5 8.3 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v f=1mhz v gs = 0 1800 230 65 2350 300 85 pf pf pf STW9NA60-sth9na60fi 2/10 .com .com .com .com 4 .com u datasheet
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd =300v i d = 4.5 a r g =4.7 w v gs =10v (see test circuit, figure 3) 21 32 30 45 ns ns (di/dt) on turn-on current slope v dd =480v i d =9a r g =47 w v gs =10v (see test circuit, figure 5) 180 a/ m s q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480 v i d =9a v gs =10v 75 11 36 100 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd =480v i d =9a r g =4.7 w v gs =10v (see test circuit, figure 5) 16 18 26 23 25 35 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ? ) source-drain current source-drain current (pulsed) 9.5 38 a a v sd ( * )forwardonvoltage i sd =9.5a v gs =0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 9.5 a di/dt = 100 a/ m s v dd = 100 v t j =150 o c (see test circuit, figure 5) 660 12 36 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ? ) pulse width limited by safe operating area safe operating area for to-247 safe operating area for isowatt218 STW9NA60-sth9na60fi 3/10 .com .com .com .com 4 .com u datasheet
thermal impedance for to-247 derating curve for to-247 output characteristics thermal impedance for isowatt218 derating curve for isowatt218 transfer characteristics STW9NA60-sth9na60fi 4/10 .com .com .com .com 4 .com u datasheet
transconductance gate charge vs gate-source voltage normalized gate threshold voltage vs temperature static drain-source on resistance capacitance variations normalized on resistance vs temperature STW9NA60-sth9na60fi 5/10 .com .com .com .com 4 .com u datasheet
turn-on current slope cross-over time accidental overload area turn-off drain-source voltage slope switching safe operating area source-drain diode forward characteristics STW9NA60-sth9na60fi 6/10 .com .com .com .com 4 .com u datasheet
fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuits for resistive load fig. 2: unclamped inductive waveform fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times STW9NA60-sth9na60fi 7/10 .com .com .com .com 4 .com u datasheet
dim. mm inch min. typ. max. min. typ. max. a 4.7 5.3 0.185 0.209 d 2.2 2.6 0.087 0.102 e 0.4 0.8 0.016 0.031 f 1 1.4 0.039 0.055 f3 2 2.4 0.079 0.094 f4 3 3.4 0.118 0.134 g 10.9 0.429 h 15.3 15.9 0.602 0.626 l 19.7 20.3 0.776 0.779 l3 14.2 14.8 0.559 0.413 0.582 l4 34.6 1.362 l5 5.5 0.217 m 2 3 0.079 0.118 dia 3.55 3.65 0.140 0.144 p025p to-247 mechanical data STW9NA60-sth9na60fi 8/10 .com .com .com .com 4 .com u datasheet
dim. mm inch min. typ. max. min. typ. max. a 5.35 5.65 0.210 0.222 c 3.3 3.8 0.130 0.149 d 2.9 3.1 0.114 0.122 d1 1.88 2.08 0.074 0.081 e 0.75 1 0.029 0.039 f 1.05 1.25 0.041 0.049 g 10.8 11.2 0.425 0.441 h 15.8 16.2 0.622 0.637 l1 20.8 21.2 0.818 0.834 l2 19.1 19.9 0.752 0.783 l3 22.8 23.6 0.897 0.929 l4 40.5 42.5 1.594 1.673 l5 4.85 5.25 0.190 0.206 l6 20.25 20.75 0.797 0.817 m 3.5 3.7 0.137 0.145 n 2.1 2.3 0.082 0.090 u 4.6 0.181 l1 a c d e h g m f l6 123 u l5 l4 d1 n l3 l2 p025c isowatt218 mechanical data STW9NA60-sth9na60fi 9/10 .com .com .com .com 4 .com u datasheet
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